High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A

High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A

Brand: ISKRA

$6 - $60 USD

MOQ: 100 pieces

Key Features

Initial drain current: 0.001

Drain-to-source resistance in open state: 0.5 yd³

Switch-on delay time: 60

Gate leakage current: 1.0E-7

Supplier Information

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Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current

0.001

Drain-to-source resistance in open state

0.5 yd³

Switch-on delay time

60

Gate leakage current

1.0E-7

Threshold voltage

2...4 thousand m³

Rise time

Built-in memory card slot, support microSD/SDHC/SDXC card (up to 256GB); manual recording/alarm recording

Shutdown delay time

175

Decline time

40

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