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Bosh sahifa / Elektr va yoritish / Elektron komponentlar / Tranzistorlar / High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
Elektr va yoritish Elektron komponentlar Tranzistorlar
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A

High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A — NPP Iskra OJSC

Brend: ISKRA
$6 - $60 USD
MOQ: 100 pieces

Asosiy xususiyatlar

Initial drain current: 0.001 A
Drain-to-source resistance in open state: 0.5 ohm
Switch-on delay time: 60
Gate leakage current: 1.0E-7 A

Yana shu brenddan ISKRA

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Powerful Silicon High Voltage N-Channel DMOS Transistors and Modules 2P829G

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High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9

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High-Power Fast Recovery Diode KD534BS

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High-Power Special Purpose Field Effect Transistors 2P7152A

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Tavsif

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Xususiyatlar

Initial drain current
0.001 A
Drain-to-source resistance in open state
0.5 ohm
Switch-on delay time
60
Gate leakage current
1.0E-7 A
Threshold voltage
2...4 V
Rise time
Built-in memory card slot, support microSD/SDHC/SDXC card (up to 256GB); manual recording/alarm recording
Shutdown delay time
175
Decline time
40

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