High-Frequency Impulse Transistors for Special Applications 2T603B/IU

High-Frequency Impulse Transistors for Special Applications 2T603B/IU

$0.90 - $3.60 USD

MOQ: 2000 pieces

Key Features

Collector reverse current: 3.0E-6

Collector junction capacitance: 1.5E-11 kV

Resorption time: 70

Emitter reverse current: 3.0E-6

Supplier Information

NPP Iskra OJSC

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Description

Silicon epitaxial-planar n-p-n pulse high-frequency transistors in metal-glass case, designed for operation in circuits of special-purpose equipment.

Specifications

Collector reverse current

3.0E-6

Collector junction capacitance

1.5E-11 kV

Resorption time

70

Emitter reverse current

3.0E-6

Emitter junction capacitance

4.0E-11 kV

Time constant of the feedback circuit at high frequency

400 ваг.сут

Static current transfer coefficient

Not less than 60, not more than 180

Collector-emitter saturation voltage

0.8 thousand m³

Base - emitter saturation voltage

1.5 thousand m³

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