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High-Frequency Impulse Transistors for Special Applications 2T603B/IU

High-Frequency Impulse Transistors for Special Applications 2T603B/IU — NPP Iskra OJSC

¥6.48 - ¥25.92 CNY
MOQ: 2000 pieces

主要特点

Collector reverse current: 3.0E-6 A
Collector junction capacitance: 1.5E-11
Resorption time: 70
Emitter reverse current: 3.0E-6 A

产品描述

Silicon epitaxial-planar n-p-n pulse high-frequency transistors in metal-glass case, designed for operation in circuits of special-purpose equipment.

规格参数

Collector reverse current
3.0E-6 A
Collector junction capacitance
1.5E-11
Resorption time
70
Emitter reverse current
3.0E-6 A
Emitter junction capacitance
4.0E-11
Time constant of the feedback circuit at high frequency
400
Static current transfer coefficient
不少于60,不超过180
Collector-emitter saturation voltage
0.8 V
Base - emitter saturation voltage
1.5 V

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