Silicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK

Silicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK

$0.03 - $0.24 USD

MOQ: 25000 pieces

Key Features

Boundary voltage: 40 thousand m³

Static current transfer coefficient: 80-250

Collector junction capacitance: 125 kV

Current transfer coefficient modulus at high frequency: 2

Supplier Information

ARSENAL KRZPP OJSC

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Description

Silicon epitaxial-planar p-n-p transistors 2T3129V9/PC are made in miniature plastic case KT-46 and are designed for operation in amplifiers, generators, voltage stabilisers, pulse devices of special-purpose equipment.

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