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Home / Electrical & Lighting / Electrical Components / Transistors / Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
Home Electrical & Lighting Electrical Components Transistors
Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A

Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A — NPP Iskra OJSC

Brand: ISKRA
$0.30 - $1.80 USD
MOQ: 5000 pieces

Key Features

Boundary voltage: 150 V
Resorption time: 1.5
Decline time: 0.5
Secondary breakdown energy: 0.1

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Description

Silicon epitaxial-planar n-p-n high-power switch transistors in metal-ceramic package designed for operation in high-power key devices.

Specifications

Boundary voltage
150 V
Resorption time
1.5
Decline time
0.5
Secondary breakdown energy
0.1
Emitter reverse current
0.01 A
Collector reverse current
0.003 A
Base-emitter saturation voltage
1.8 V
Collector-emitter saturation voltage
2 V

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