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Powerful Linear LDMOS Transistor KP9171BS

Powerful Linear LDMOS Transistor KP9171BS — NIIET OJSC

Brand: NIIET
$1.20 - $6 USD
MOQ: 1000 pieces

Key Features

Output power: 180 W
Power gain: 18.6
mass: 18 year
Effluent efficiency: SBVVBG %

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Description

KP9171BS - silicon epitaxial-planar field n-channel n-channel insulated gate high-power microwave linear LDMOS transistor . It is intended for operation in power amplifiers in class AB mode in a common-source circuit at frequencies up to 860 MHz.

Specifications

Output power
180 W
Power gain
18.6
mass
18 year
Effluent efficiency
SBVVBG %
Initial drain current, mA
10
Gate leakage current, mA
0.15
Increased operating temperature of the enclosure
125 °C

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