Powerful Linear LDMOS Transistor KP9171A

Powerful Linear LDMOS Transistor KP9171A

Brand: NIIET

$3 - $18 USD

MOQ: 500 pieces

Key Features

Output power in envelope peak: 140 cm³

Effluent efficiency: 45 set

Increased operating temperature of the enclosure: 125 million m³

Weight: 5 million m² total area

Supplier Information

NIIET OJSC

🇷🇺 📦 🏭 🛡️

View All Products

Quick Inquiry

More from NIIET

Powerful GaN Microwave Transistor for Amplification PP9137A

$60-$300

Powerful GaN-based Microwave Transistor PP9170D

$30-$180

32-bit Microcontroller ARM Cortex-M4F for Motor Control K1921VK01T

$3-$18

High-Power GaN Microwave Transistors PП9136A

$60-$300

High-Power GaN Microwave Transistor PP9138A

$9-$60

Powerful GaN-based Microwave Transistor PP9139B1

$90-$360

Powerful GaN-Based Microwave Transistor PP9170B

$9-$36

LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz

$3-$18

Ultra-Low Power 32-Bit Microcontroller K1921VG015

$1.20-$6

Powerful Linear LDMOS Transistor KP9171BS

$1.20-$6

4-Channel LVDS Signal Transmitter Model K5537EU015

$0.60-$6

Description

KP9171A - silicon epitaxial-planar field n-channel with insulated gate powerful microwave linear LDMOS transistor . It is intended for operation in power amplifiers in class AB mode in a common-source circuit at frequencies up to 860 MHz

Specifications

Output power in envelope peak

140 cm³

Effluent efficiency

45 set

Increased operating temperature of the enclosure

125 million m³

Weight

5 million m² total area

Power gain

20

Initial drain current, mA

3

Gate leakage current, mA

0.05

Related Products

LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz

LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz

$3-$18 USD

Name: LDMOS microwave field-effect pulsed mode transistor L - frequency range

Name: LDMOS microwave field-effect pulsed mode transistor L - frequency range

NIIET OJSC 🇷🇺

Powerful Linear LDMOS Transistor KP9171BS

Powerful Linear LDMOS Transistor KP9171BS

$1.20-$6 USD

Output power: 180

Power gain: 18.6

NIIET OJSC 🇷🇺

Linear Mode LDMOS RF Transistor for Embedded Systems

Linear Mode LDMOS RF Transistor for Embedded Systems

$900-$3,600 USD

Output power: 150

Operating frequency range: 860

NIIET OJSC 🇷🇺

High-Resistance Silicon Photodiode FD342M

High-Resistance Silicon Photodiode FD342M

$0.30-$2.40 USD

Spectral sensitivity range, µm: 0.4...1.1

Spectral sensitivity range, µm: 0.4...1.1

OJSC NPO ORION 🇷🇺

High-Power High-Voltage Field Transistor KP829D

High-Power High-Voltage Field Transistor KP829D

$0.90-$3.60 USD

Type: powerful high-voltage

Type: powerful high-voltage

NPP Iskra OJSC 🇷🇺

Low-Frequency Diode D175-500x for Electrical Devices

Low-Frequency Diode D175-500x for Electrical Devices

$0.90-$3.60 USD

Repetitive pulsed reverse voltage: 1200

Average direct current: 500

PROTON-ELECTROTEX OJSC 🇷🇺

Special Purpose Transistor Optocoupler 3OT127A

Special Purpose Transistor Optocoupler 3OT127A

$0.30-$1.80 USD

Input voltage: 1.6

Output residual voltage: 1.5

NPP Iskra OJSC 🇷🇺

Semiconductor Lamp for Signal Devices LPRZh01-2.5

Semiconductor Lamp for Signal Devices LPRZh01-2.5

$3-$18 USD

Dimensions: 40x16x16 (diameter)

Average service life, at least: 10

NIIPP OJSC 🇷🇺

Rectifiers for Power Supply of Polycrystalline and Monocrystalline Silicon Production

Rectifiers for Power Supply of Polycrystalline and Monocrystalline Silicon Production

$90,000-$600,000 USD

Rated rectified output current: 1000...7500

Rated rectified voltage: 60...1000

ROSELKO OJSC 🇷🇺

Three-Phase Thyristor Rectifier B-TPE-160(200)-230(320)-UHL5

Three-Phase Thyristor Rectifier B-TPE-160(200)-230(320)-UHL5

$4,200-$15,000 USD

Rated output current: 200

Rated output voltage: 320

INVERTER OJSC 🇷🇺

Powerful GaN Microwave Transistor for Amplification PP9137A

Powerful GaN Microwave Transistor for Amplification PP9137A

$60-$300 USD

Output power: 10

Maximum voltage: 130

NIIET OJSC 🇷🇺

Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A

Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A

$0.30-$1.80 USD

Boundary voltage: 150

Resorption time: 1.5

NPP Iskra OJSC 🇷🇺

Powerful NPN Switching Transistors for Special Applications 2T856G

Powerful NPN Switching Transistors for Special Applications 2T856G

$0.90-$3.60 USD

Boundary voltage: 450

Collector-emitter saturation voltage: 1.5

NPP Iskra OJSC 🇷🇺

Transistor Optocoupler 3OT144A

Transistor Optocoupler 3OT144A

$0.12-$0.60 USD

Insulation voltage: 500

Input current: 0.01

OPTRON OJSC 🇷🇺

Rectifier Diode D271-500х for Electrical and Electronic Devices

Rectifier Diode D271-500х for Electrical and Electronic Devices

$0.30-$1.80 USD

Repetitive pulsed reverse voltage: 1000

Average direct current: 400

PROTON-ELECTROTEX OJSC 🇷🇺

Low-Frequency Rectifier Diode D443-1000

Low-Frequency Rectifier Diode D443-1000

$0.30-$1.80 USD

Repetitive pulsed reverse voltage: 2600

Average direct current: 1000

PROTON-ELECTROTEX OJSC 🇷🇺

High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A

High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A

$6-$60 USD

Initial drain current: 0.001

Drain-to-source resistance in open state: 0.5

NPP Iskra OJSC 🇷🇺

Low-Frequency Rectifier Diode D133-1000

Low-Frequency Rectifier Diode D133-1000

$0.30-$1.80 USD

Repetitive pulsed reverse voltage: 1800

Average direct current: 1000

PROTON-ELECTROTEX OJSC 🇷🇺

Signal Rectifier V-OPE-TM-1(2) for Underground Pipeline Protection

Signal Rectifier V-OPE-TM-1(2) for Underground Pipeline Protection

$900-$9,000 USD

Output power, kVA: 0.24...4.8

Output power, kVA: 0.24...4.8

PJSC SIGNAL 🇷🇺

Solid Insulation Transformer Bushing BRIT-R-90-110-550/800 KN 1.9.004-RY

Solid Insulation Transformer Bushing BRIT-R-90-110-550/800 KN 1.9.004-RY

$1,500-$4,800 USD

Voltage class: 110

Rated current: 800

H ENERGY LLC 🇷🇺