Powerful GaN-based Microwave Transistor PP9170D

Powerful GaN-based Microwave Transistor PP9170D

Brand: NIIET

$30 - $180 USD

MOQ: 50 pieces

Key Features

Output power: 100 cm³

Frequency: 4

Maximum voltage: 150 thousand m³

Transistor weight: 1 million m² total area

Supplier Information

NIIET OJSC

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Description

Powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.

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