Powerful GaN-Based Microwave Transistor PP9170B

Powerful GaN-Based Microwave Transistor PP9170B

Brand: NIIET

$9 - $36 USD

MOQ: 200 pieces

Key Features

Output power: 100 cm³

Frequency: 3.1

Maximum voltage: 150 thousand m³

Transistor weight: 5 million m² total area

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Description

A powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, S-band frequencies. Due to small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers

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