Non-volatile Solid State Data Storage Device 1024-16 GSSBA01TR16STF

Non-volatile Solid State Data Storage Device 1024-16 GSSBA01TR16STF

Brand: GS NANOTECH

$15 - $48 USD

MOQ: 200 pieces

Key Features

Buffer memory capacity: 1024 thous. t/season

Maximum sequential read speed: 530

Maximum sequential write speed: 470

Power supply voltage: 5 thousand m³

Supplier Information

GS NANOTECH OJSC

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Description

Non-volatile non-mechanical memory devices with a four-channel controller used in them, working with NAND Flash crystals of TLC type manufactured by GES-Nanotech JSC. This drive is targeted at consumer devices with SATA III, 6Gbps interface.

Specifications

Buffer memory capacity

1024 thous. t/season

Maximum sequential read speed

530

Maximum sequential write speed

470

Power supply voltage

5 thousand m³

Type of memory

mlc

Form factor

2.5''

Device type

ssd

Interface

sata 3

Usage options

workstations; servers

Maximum random write speed, IOPS

48000

Memory access time, max.

430 visit/shift

Power supply in operating mode

1 cm³

Power supply in idle mode

2 cm³

Operating temperature range

0...70 million m³

Weight

65 m² living area

Temperature range of testing (standard)

0...70 million m³

Maximum random read speed, IOPS

55000

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