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Home / Electrical & Lighting / Electrical Components / Transistors / High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
Home Electrical & Lighting Electrical Components Transistors
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J

High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J — NPP Iskra OJSC

$1.20 - $6 USD
MOQ: 1000 pieces

Key Features

Initial drain current: 0.0005 A
Drain-to-source resistance in open state: 0.003 ohm
Switch-on delay time: 80
Gate leakage current: 1.0E-7 A

Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current
0.0005 A
Drain-to-source resistance in open state
0.003 ohm
Switch-on delay time
80
Gate leakage current
1.0E-7 A
Threshold voltage
2...4 V
Rise time
80
Shutdown delay time
One link up to 16GB 64-bit DDR4-2400 MHz with ECC support; 16GB (for CPC1309-01); 8GB (for CPC1309-02)
Decline time
60

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