High Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9

High Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9

$9 - $36 USD

MOQ: 200 pieces

Key Features

Initial drain current: 0.001

Drain-to-source resistance in open state: 0.5 yd³

Threshold voltage: 2...4 thousand m³

Gate leakage current: 1.0E-7

Supplier Information

NPP Iskra OJSC

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Description

Powerful high-voltage field-effect n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supplies, nodes and blocks of converters and other special-purpose equipment

Specifications

Initial drain current

0.001

Drain-to-source resistance in open state

0.5 yd³

Threshold voltage

2...4 thousand m³

Gate leakage current

1.0E-7

Switch-on delay time

60

Rise time

Built-in memory card slot, support microSD/SDHC/SDXC card (up to 256GB); manual recording/alarm recording

Shutdown delay time

175

Decline time

40

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