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High-Voltage Bipolar Power Transistors 2T8143F1

High-Voltage Bipolar Power Transistors 2T8143F1

Brand: ISKRA
$0.90 - $3.60 USD
MOQ: 2000 pieces

Key Features

Collector-emitter boundary voltage: 240 thousand m³
Collector-emitter saturation voltage: 0.8 thousand m³

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Description

Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment

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