Microcircuit ROM with Flash-type electrical reprogramming with memory capacity of 1 Mbit (128K x 8 / 2 sectors of 64K), interfaces: SPI (operating frequency up to 50 MHz), Supply voltage from 3 to 5.5 V, Current consumption - static up to 2 mA, dynamic up to 15 mA, storage time >10 years, number of rewrite cycles >15 000, ESD 2 kV, access time 55 ns, operating temperature from -40 to +85 deg., TDFN case (5 x 6) - 8L - V1 - NIPDAU.
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