
Power IGBT module AnM300LCB12M
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon IGBT module AnM300LCB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
300 A
Recovery time
200
Configuration type
Top level key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Field transistor 2P527A9
View Details
Transistor KP7154BS
View Details
High-power NPN special-purpose amplifying transistors 2T908A-2
View Details
Travelling wave lamp "Lotto Man"
View Details
Powerful linear LDMOS transistor KP9171BS
View Details
Silicon high voltage high power channel DMOS transistors and modules 2P829G9
View Details
Powerful microwave transistor based on gallium nitride PP9138B
View Details
High-power DMOS field-effect transistors 2P7246A91
View Details
Power IGBT module AnM200RCB065M
View Details
Special purpose transistor optocouples 3OT123B9 OSM
View Details
CMOS N-channel transistor AnS140N06
View Details
Powerful microwave transistor on the basis of gallium nitride PP9170B
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions