Available for Import
Power IGBT module AnM150HBEB17M Factory Direct
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM150HBEB17M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
150 A
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Silicon Epitaxial-Planar Microwave Transistor KT6131A
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsAnDM150CD12M Power Module for Enhanced Performance
View DetailsPower IGBT Module AnM75LCA12M
View DetailsPowerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View DetailsPower Module AnS150FRD065 for Industrial Applications
View DetailsHigh-Frequency p-n-p Transistor 2T3108A/PK
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View DetailsN-Channel MOSFET Transistor AnD1N70
View DetailsHigh Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9
View DetailsPower Module AnM200HBB12M for Industrial Applications
View DetailsPower Module AnM200SSP25M for Industrial Applications
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions