Available for ImportHigh Voltage Bipolar Power Transistor 2T8143U for High-Power Applications
Manufacturer:NPP Iskra OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
180 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Power IGBT Module AnM600SSC12M
View Details
Miniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829B
View Details
Power Module AnM200SSP25M for Industrial Applications
View Details
N-Channel MOSFET Transistor AnS140N06
View Details
Silicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
View Details
Power Wrenches K3003KI014
View Details
High-Power NPN Transistors for Special Applications 2T968A-5
View Details
High-Power High-Voltage Field Transistor KP829D
View Details
Power IGBT Module AnM100RCA065M
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions