Available for Import
Power IGBT module AnM200HBEBEB17M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM200HBEB17M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
200 A
Recovery time
200
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Power Module AnM100HBA12M - High Efficiency Performance
View DetailsPower Keys K1376KI014 - High Performance Switches
View DetailsN-Channel MOSFET Transistor AnS140N06
View DetailsSpecial Purpose Transistor Optocouplers 3OT127V
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsN-Channel MOSFET Transistor AnR40N20
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View DetailsAnDM400SC12M Power Module
View DetailsDMOП P-Channel Transistor AnP53P03
View DetailsHigh Voltage N-Channel DMOS Transistor KP7154BS
View DetailsPower Switches K3003KI014A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions