
Power IGBT module AnM300LCB065M
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon IGBT module AnM300LCB065M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
650 V
Maximum permissible current
300 A
Recovery time
170
Configuration type
Lower level key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Powerful microwave transistor on the basis of gallium nitride PP9139A1
View Details
Power IGBT module AnM150HBEB12M
View Details
Powerful microwave transistor on the basis of gallium nitride PP9170G
View Details
Powerful microwave transistors based on gallium nitride PP9136A
View Details
CMOS N-channel transistor AnR40N20
View Details
Special purpose thyristor optocouplers 3OU186A
View Details
Power IGBT module AnM75LCA12M
View Details
High-power high-voltage field-effect transistor KP829B9
View Details
AnM450HBE065M Power IGBT Module
View Details
AnS150FRD065 power module
View Details
Powerful microwave transistor on the basis of gallium nitride PP9170B
View Details
Power module MTKI-2000-25
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions