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Powerful GaN-Based Microwave Transistor PP9170B for Amplifier Applications
Manufacturer:
NIIET OJSC
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Description
A powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, S-band frequencies. Due to small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers
Specifications
Transistor weight
5 year
Frequency
3.1
Output power
100 W
Maximum voltage
150 V
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