Available for Import
High-Voltage Bipolar Power Transistors 2T8143F1 for Switching Applications
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
240 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful NPN Transistor 2T808A for Special Applications
View Details
Powerful GaN Microwave Transistor for Amplification PP9137A
View Details
High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View Details
Powerful N-Channel DMOP Transistors 2P7246A91
View Details
Special Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View Details
N-Channel MOSFET Transistor AnD1N70
View Details
High-Power NPN Switching Transistor 2T867A for Special Applications
View Details
Silicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View Details
LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View Details
Wave Running Light "Lotoshnik
View Details
Silicon N-P-N Switching Transistor KT908A
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions