High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9

Available for Import

High Voltage Power N-Channel DMOS Transistors for Secondary Power Supplies 2P829G9

High-Power Transistors

Manufacturer:NPP Iskra OJSC

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FOB, CIF & EXW terms available

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Available Models

Silicon high voltage high power channel DMOS transistors and modules 2P829B9 Silicon high-voltage high-power channel DMOS-transistors and modules 2P829A9

Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current

0.0005 A

Gate leakage current

1.0E-7 A

Drain-to-source resistance in open state

0.05 ohm

Threshold voltage

2...4 V

Switch-on delay time

Rise time

SBVVBG

Shutdown delay time

170

Decline time

SBVVBG

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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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High Voltage Power N-Channel DMOS Transistors for Secondary Power Supplies 2P829G9

Available Models

Description

Specifications

Share your requirements for a quick response!