Available for Import
AnM300HBB12H Power IGBT Module
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM300HBBB12H
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
300 A
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Silicon Planar Transistor 2T117V OSH for Electronic Devices
View DetailsBipolar Transistor 1NT251 for Switching Devices I93.456.000TU
View DetailsSilicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View DetailsHigh Voltage N-P-N Switching Transistor KT8144A
View DetailsAnDM100AD17M Power Module - Efficient Power Management
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View DetailsTransistor Optocoupler AOT110B with Local Gold-Plated Pins
View DetailsContinuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsSilicon N-P-N Switching Transistor KT908A
View DetailsHigh-Frequency Field Transistors for Special Applications 2P301B/IU
View DetailsNon-Hermetic Transistors and Diodes AnR30IGB065D
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions