Available for Import
Power IGBT module AnM300HBEB065M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM300HBEB065M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
650 V
Maximum permissible current
300 A
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power IGBT Module AnM150HBEВ12M
View DetailsTransistor Optocoupler Special Purpose 3OT123A9 OSM
View DetailsHigh-Voltage NPN Silicon Switching Transistor KT8155G
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
View DetailsHigh-Power GaN Microwave Transistors PП9136A
View DetailsSpecial Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsPowerful GaN-based Microwave Transistor PP9139B1
View DetailsN-Channel MOSFET Transistor AnD1N70
View DetailsHigh Voltage Bipolar Power Transistor 2T8144VM1
View DetailsHigh-Frequency Pulse Transistor 2T606A for Specialized Applications
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions