Available for Import
Power IGBT module AnM150RCB12M from Russia
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM150RCB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
150 A
Recovery time
200
Configuration type
Top level key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Field-effect P-Channel Transistor 2P527A9
View DetailsHigh-Voltage NPN Silicon Switching Transistor KT8155G
View DetailsNon-Hermetic Transistors and Diodes AnR30IGB065D
View DetailsLDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View DetailsHigh-Power High-Voltage Field Transistor KP829Zh
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8121B2
View DetailsPowerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View DetailsHigh-Power High-Voltage Field Transistor KP829A
View DetailsSilicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View DetailsSpecial Purpose Transistor Optocoupler 3OT127A
View DetailsPower Module AnM200HBB12M for Industrial Applications
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions