
Power IGBT module AnM300RCB12M
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon IGBT module AnM300RCB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
300 A
Recovery time
200
Configuration type
Lower level key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Special purpose thyristor optocouplers 3OU186A
View Details
Powerful microwave transistor based on gallium nitride PP9138B
View Details
Powerful microwave transistors based on gallium nitride PP9136A
View Details
Special purpose transistor optocouplers 3OT127A
View Details
Field transistor 2P527A9
View Details
High-power NPN special-purpose amplifying transistors 2T808A
View Details
Travelling wave lamp "Lotto Man"
View Details
Special purpose transistor optocouples 3OT127B
View Details
Silicon planar N-P-N high-power high-voltage switching transistor of KT8144A type
View Details
Powerful microwave transistor on the basis of gallium nitride PP9139B1
View Details
AnDM400SC12M power module
View Details
CMOS N-channel transistor AnU12N10L
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions