Available for Import
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM450HBE12M
Specifications
Housing type
MPK-62-3
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
450 A
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Specialized Thyristor Optocouplers 3OU186A
View Details
High-Power DMOS Transistors 2P7246A-5
View Details
High-Power GaN Microwave Transistor PP9138A
View Details
Special Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View Details
Silicon Epitaxial-Planar Microwave Transistor KT6131A
View Details
N-Channel MOSFET Transistor An10N70S10
View Details
Silicon Planar Transistor 2T117V OSH for Electronic Devices
View Details
High-Voltage NPN Silicon Switching Transistor KT8155G
View Details
High Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9
View Details
High Voltage Bipolar Power Transistor 2T8144VM1
View Details
High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View Details
Special Purpose Thyristor Optocouplers 3OU186B
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions