Available for Import
Power IGBT Module AnM600SSC12M for High-Efficiency Applications
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM600SSC12M
Specifications
Housing type
MPK-62-2
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
600 A
Configuration type
Single key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View Details
High-Frequency p-n-p Transistor 2T3108A/PK
View Details
AnDM150CD12M Power Module for Enhanced Performance
View Details
Transistor Optocoupler Special Purpose 3OT123A9 OSM
View Details
Power Module AnM200SSP25M for Industrial Applications
View Details
Powerful High-Voltage Field Transistor KP829B
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
Powerful GaN Microwave Transistor for Amplifier Applications PP9170E
View Details
High-Power DMOS Transistors 2P7246A-5
View Details
Transistor Optocoupler AOT110B with Local Gold-Plated Pins
View Details
Power IGBT Module AnM100RCA065M
View Details
Low-Noise GaAs Planar Field Transistor AП379A9
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions