Available for Import
Power IGBT module AnM300HBB12H
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM300HBB12H
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
300 A
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful High-Voltage N-P-N Switching Transistor KT8143F
View DetailsHigh-Power DMOS Transistors 2P7242A-4
View DetailsMiniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View DetailsHigh-Frequency p-n-p Transistor 2T3108A/PK
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View DetailsHigh-Frequency Field Transistors for Special Applications 2P301B/IU
View DetailsHigh-Frequency Impulse Transistors for Special Applications 2T603B/IU
View DetailsPowerful NPN Switching Transistor 2T808A-2 for Special Applications
View DetailsDual N-Channel Power MOSFET Transistor MIK8205
View DetailsHigh-Power GaN Microwave Transistor PP9138A
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions