Available for Import

Powerful Silicon High Voltage N-Channel DMOS Transistors and Modules 2P829G for Efficient Power Supply

High-Power Transistors

Manufacturer: NPP Iskra OJSC

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Email Inquiry

Available Models

Silicon high voltage high power channel DMOS transistors and modules 2P829D Silicon high voltage high power channel DMOS transistors and modules 2P829E

Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current

0.0005 A

Gate leakage current

1.0E-7 A

Drain-to-source resistance in open state

0.05 ohm

Threshold voltage

2...4 V

Switch-on delay time

Rise time

SBVVBG

Shutdown delay time

170

Decline time

SBVVBG

Save Your Time

Share your requirements for a quick response!

Looking for

Quantity

Your mobile

Instant response in 15 minutes

Best wholesale prices guaranteed

Direct from manufacturer

Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

Categories

Language

Quick Links

Powerful Silicon High Voltage N-Channel DMOS Transistors and Modules 2P829G for Efficient Power Supply

Available Models

Description

Specifications

Share your requirements for a quick response!