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High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A for Secondary Power Sources

High-Power Transistors

Manufacturer:NPP Iskra OJSC

Price:Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

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Silicon high voltage high power channel DMOS transistors and modules 2P829B

Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current

0.001 A

Gate leakage current

1.0E-7 A

Drain-to-source resistance in open state

0.5 ohm

Threshold voltage

2...4 V

Switch-on delay time

Rise time

Built-in memory card slot, support microSD/SDHC/SDXC card (up to 256GB); manual recording/alarm recording

Shutdown delay time

175

Decline time

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A for Secondary Power Sources

Available Models

Description

Specifications

Share your requirements for a quick response!