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Powerful Linear LDMOS Transistor KP9171A for RF Amplifiers and Applications
Manufacturer:
NIIET OJSC
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Description
KP9171A - silicon epitaxial-planar field n-channel with insulated gate powerful microwave linear LDMOS transistor . It is intended for operation in power amplifiers in class AB mode in a common-source circuit at frequencies up to 860 MHz
Specifications
Weight
5 year
Output power in envelope peak
140 W
Power gain
20
Effluent efficiency
45 %
Initial drain current, mA
3
Gate leakage current, mA
0.05
Increased operating temperature of the enclosure
125 °C
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