Available for Import
P-N-P Silicon Transistor KT234V9 for Amplification and Switching Applications
Manufacturer:
KREMNIY EL OJSC
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Description
Designed for operation in switching, amplifying circuits, circuits of generation of high-frequency oscillations and other radio-electronic equipment of industrial and technical purpose
Specifications
Boundary voltage
Not less than 45 V
Maximum permissible DC collector-to-base voltage
Not more than 50 V
Base-emitter saturation voltage
Not more than 1.0 V
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