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High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
Manufacturer:
NIIET OJSC
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Description
Powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.
Specifications
EFFICIENCY
SBVVBG %
Output power
SBVVBG W
Maximum voltage
130 V
Transistor weight
5 year
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