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Powerful GaN-based Microwave Transistor PP9170G for Amplifier Applications

High-Power Transistors

Manufacturer:NIIET OJSC

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FOB, CIF & EXW terms available

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Description

Powerful microwave transistor on the basis of gallium nitride for application in amplifying stages, L-, S- frequency ranges. Due to small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.

Specifications

Transistor weight

1 year

Frequency

Output power

SBVVBG W

Maximum voltage

150 V

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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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Powerful GaN-based Microwave Transistor PP9170G for Amplifier Applications

Description

Specifications

Share your requirements for a quick response!