Available for ImportPowerful GaN-based Microwave Transistor PP9170G for Amplifier Applications
Manufacturer:NIIET OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Powerful microwave transistor on the basis of gallium nitride for application in amplifying stages, L-, S- frequency ranges. Due to small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.
Specifications
Transistor weight
1 year
Frequency
4
Output power
SBVVBG W
Maximum voltage
150 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power High-Voltage Field Transistor KP829B9
View DetailsHigh-Frequency Pulse Transistor 2T606A for Specialized Applications
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsHigh-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View DetailsHigh Voltage Powerful N-Channel DMOS Transistor KP7154BS
View DetailsContinuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View DetailsPower Module AnS150FRD065 for Industrial Applications
View DetailsTransistor Optocoupler AOT123A with Local Gold Plating
View DetailsSpecial Purpose Transistor Optocoupler 3OT127A
View DetailsHigh Voltage N-P-N Switching Transistor KT8144A
View DetailsPower IGBT Module AnM450HBE065M for Efficient Switching
View DetailsN-Channel MOSFET Transistor AnB12N20
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions