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High Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9 for Efficient Power Applications

High-Power Transistors

Manufacturer:NPP Iskra OJSC

Price:Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

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Available Models

Silicon high voltage high power channel DMOS transistors and modules 2P829E9 Silicon high voltage high power channel DMOS transistors and modules 2P829D9 Silicon high voltage high power channel DMOS transistors and modules 2P829J9

Description

Powerful high-voltage field-effect n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supplies, nodes and blocks of converters and other special-purpose equipment

Specifications

Initial drain current

0.001 A

Gate leakage current

1.0E-7 A

Drain-to-source resistance in open state

0.5 ohm

Threshold voltage

2...4 V

Switch-on delay time

Rise time

Built-in memory card slot, support microSD/SDHC/SDXC card (up to 256GB); manual recording/alarm recording

Shutdown delay time

175

Decline time

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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High Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9 for Efficient Power Applications

Available Models

Description

Specifications

Share your requirements for a quick response!