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High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J for Secondary Power Sources

High-Power Transistors

Manufacturer:NPP Iskra OJSC

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FOB, CIF & EXW terms available

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Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current

0.0005 A

Gate leakage current

1.0E-7 A

Drain-to-source resistance in open state

0.003 ohm

Threshold voltage

2...4 V

Switch-on delay time

Rise time

Shutdown delay time

One link up to 16GB 64-bit DDR4-2400 MHz with ECC support; 16GB (for CPC1309-01); 8GB (for CPC1309-02)

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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J for Secondary Power Sources

Description

Specifications

Share your requirements for a quick response!