Available for Import
High-Power NPN Switching Transistor 2T867A for Specialized Equipment
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Silicon planar-epitaxial n-p-n high-power high-voltage transistor in glass-metal package, designed for operation in special-purpose equipment circuits.
Specifications
Collector reverse current
0.003 A
Emitter reverse current
0.01 A
Boundary voltage
200 V
Collector-emitter saturation voltage
1.2 V
Decline time
0.4
Resorption time
1.3
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-based Microwave Transistor PP9170D
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsPowerful NPN Switching Transistor 2T808A-2 for Special Applications
View DetailsHigh-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View DetailsPowerful GaN-Based Microwave Transistor PP9170V
View DetailsPowerful Linear LDMOS Transistor KP9171BS
View DetailsN-Channel MOSFET Transistor AnR40N20
View DetailsPowerful GaN-based Microwave Transistor PP9170A
View DetailsHigh-Power High-Voltage Field Transistor KP829Zh
View DetailsSilicon Planar Transistor 2T117V OSH for Electronic Devices
View DetailsHigh Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions