Available for Import
High-voltage bipolar high-current transistors 2T8143U3
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
180 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Compact NPN Bipolar Transistor KT665A9 for Surface Mount
View DetailsHigh-Power High-Voltage Field Transistor KP829A
View DetailsPowerful GaN Microwave Transistor for Amplification PP9137A
View DetailsN-Channel MOSFET Transistor AnS140N06
View DetailsHigh Voltage Bipolar Power Transistor 2T8143U
View DetailsPower Wrenches K3003KI014
View DetailsHigh Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View DetailsSpecial Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View DetailsPowerful NPN Transistor 2T808A for Special Applications
View DetailsHigh-Power High-Voltage Field Transistor KP829B9
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsHigh Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions