Available for Import
High-voltage bipolar high-current transistors 2T8143M
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
240 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Power Module AnS150FRD065 for Industrial Applications
View DetailsPower Module AnDM200EA12M - Efficient Energy Control
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsHigh-Frequency Field Transistors for Special Applications 2P301B/IU
View DetailsHigh-Power NPN Transistors for Special Applications 2T968A-5
View DetailsPowerful High-Voltage N-P-N Switching Transistor KT8143F
View DetailsSilicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829B
View DetailsCompact N-Channel Field Transistor 2P526A9
View DetailsPower IGBT Module AnM75LCA12M
View DetailsHigh Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View DetailsN-Channel MOSFET Transistor AnB3N120 for Efficient Switching
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions