Available for Import

High-voltage bipolar high-current transistors 2?8143?3

High-Power Transistors

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Email Inquiry

Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

High-voltage bipolar high-current transistors 2T8144VM1 High-voltage bipolar high-current transistors 2T8143U2 High-voltage bipolar high-current transistors 2?8143?2 High-voltage bipolar high-current transistors 2T8143P High-voltage bipolar high-current transistors 2T8143D

Description

Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment

Specifications

Collector-emitter boundary voltage

120 V

Collector-emitter saturation voltage

0.8 V

Save Your Time

Share your requirements for a quick response!

Looking for

Quantity

Your mobile

Instant response in 15 minutes

Best wholesale prices guaranteed

Direct from manufacturer

Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

Categories