Available for Import
High-voltage bipolar high-current transistors 2T8143P
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
150 V
Collector-emitter saturation voltage
1.2 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power GaN Microwave Transistors PП9136A
View DetailsNon-Hermetic Package Transistors and Diodes AnS75IGB065D
View DetailsHigh-Power NPN Transistors for Special Applications 2T968A-5
View DetailsTransistor Optocoupler Special Purpose 3OT123A9 OSM
View DetailsHigh-Frequency Pulse Transistor 2T606A for Specialized Applications
View DetailsN-channel MOSFET Transistor AnU12N10L
View DetailsPowerful GaN-based Microwave Transistor PP9170G
View DetailsHigh-Power NPN Switching Transistor 2T867A for Special Applications
View DetailsPowerful GaN-Based Microwave Transistor PP9170V
View DetailsHigh Voltage Bipolar Power Transistors 2T8144BM1
View DetailsSilicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions