Available for Import
High-voltage bipolar high-current transistors 2T8143E
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
120 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Special Purpose Transistor Optocoupler 3OT127A
View DetailsPowerful GaN Microwave Transistor for Amplification PP9137A
View DetailsPowerful High-Voltage N-P-N Switching Transistor KT8143F
View DetailsHigh-Power NPN Transistors for Special Applications 2T968A-5
View DetailsHigh-Power DMOS Transistors 2P7242A-4
View DetailsPower Keys K1376KI014 - High Performance Switches
View DetailsHigh-Power IGBT Module AnM150HBEВ12M
View DetailsSilicon Epitaxial-Planar Microwave Transistor KT6131A
View DetailsPower Switches K3003KI014A
View DetailsHigh-Power GaN Microwave Transistor PP9138B
View DetailsHigh-Power DMOS Transistors 2P7246A-5
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions