
High-voltage bipolar high-current transistors 2T8143F2
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
240 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Silicon planar N-P-N high-power high-voltage switching transistor of KT8121B2 type
View Details
Powerful linear LDMOS transistor KP9171BS
View Details
Special purpose transistor optocouples 3OT123B9 OSM
View Details
High-power DMOS field-effect transistors 2P7246A-5
View Details
Powerful high-voltage field-effect transistor KP829A9
View Details
Special purpose transistor optocouples 3OT123G OSM
View Details
Transistor 2T368A/PK
View Details
Transistor MIK8205
View Details
Field transistor 2P526A9
View Details
AOT110B transistor optocoupler, (with local gold-plating of the leg)
View Details
Silicon high-voltage high-power channel DMOS transistors and modules 2P829I9
View Details
Transistor KT879A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions