Available for Import
Powerful GaN Microwave Transistor for Amplifier Applications - Model PP9170E
Manufacturer:
NIIET OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, C- and S-band frequencies.
Specifications
Transistor weight
1 year
Frequency
6
Output power
SBVVBG W
Maximum voltage
150 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
AnDM100AD17M Power Module - Efficient Power Management
View Details
Special Purpose Transistor Optocoupler 3OT127A
View Details
High-Power High-Voltage Field Transistor KP829B9
View Details
DMOП P-Channel Transistor AnP53P03
View Details
High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View Details
N-Channel MOSFET Transistor AnS140N06
View Details
N-channel MOSFET Transistor AnU12N10L
View Details
N-Channel MOSFET Transistor An10N70S10
View Details
AnDM400SC12M Power Module
View Details
Miniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View Details
Powerful NPN Transistor 2T808A for Special Applications
View Details
Power Module AnM200HBB12M for Industrial Applications
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions