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Powerful linear LDMOS transistor KP9171BS
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
KP9171BS - silicon epitaxial-planar field n-channel n-channel insulated gate high-power microwave linear LDMOS transistor . It is intended for operation in power amplifiers in class AB mode in a common-source circuit at frequencies up to 860 MHz.
Specifications
Weight
18 g
Output power
180 W
Power gain
18.6
Effluent efficiency
SBVVBG %
Initial drain current, mA
10
Gate leakage current, mA
0.15
Increased operating temperature of the enclosure
125 °C
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Air freight: 14-21 days (for urgent orders)
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