Available for Import

High-power NPN special-purpose switching transistors 2T879B

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

High voltage bipolar high current transistors 2T8143U High-voltage bipolar high-current transistors 2T8143T1 High-power NPN special-purpose switching transistors 2T879A High-voltage bipolar high-current transistors 2T8143S High-voltage bipolar high-current transistors 2T8143T

High voltage bipolar high current transistors 2T8143U1 High-voltage bipolar high-current transistors 2T8143F High-voltage bipolar high-current transistors 2?8143?1

Description

Silicon epitaxial-planar n-p-n high-power switch transistors in metal-ceramic package designed for use in high-power key devices and other special-purpose equipment.

Specifications

Collector reverse current

0.003 A

Emitter reverse current

0.01 A

Boundary voltage

200 V

Collector-emitter saturation voltage

2 V

Base-emitter saturation voltage

1.8 V

Secondary breakdown energy

100

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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