Available for Import

High-voltage bipolar high-current transistors 2T8143T1

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

High voltage bipolar high current transistors 2T8143U High-power NPN special-purpose switching transistors 2T879A High-power NPN special-purpose switching transistors 2T879B High-voltage bipolar high-current transistors 2T8143S High-voltage bipolar high-current transistors 2T8143T

High voltage bipolar high current transistors 2T8143U1 High-voltage bipolar high-current transistors 2T8143F High-voltage bipolar high-current transistors 2?8143?1

Description

Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment

Specifications

Collector-emitter boundary voltage

120 V

Collector-emitter saturation voltage

0.8 V

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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