Available for Import
High-voltage bipolar high-current transistors 2T8143T1
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
120 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-Based Microwave Transistor PP9170V
View Details
High-Power DMOS Transistors 2P7246A-5
View Details
High Voltage Bipolar Power Transistor 2T8143U
View Details
Power Keys K1376KI014 - High Performance Switches
View Details
Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View Details
High Voltage N-P-N Switching Transistor KT8144A
View Details
N-channel MOSFET Transistor AnU12N10L
View Details
High-Frequency Pulse Transistor 2T606A for Specialized Applications
View Details
Powerful High-Voltage Field Transistor KP829B
View Details
Silicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View Details
Powerful High-Voltage N-P-N Switching Transistor KT8143F
View Details
P-N-P Silicon Transistor KT234V9
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions