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High-voltage bipolar high-current transistors 2T8143F Available for Import

High-voltage bipolar high-current transistors 2T8143F

High-Power Transistors
Manufacturer: NPP Iskra OJSC
Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Available Models

High Voltage Bipolar Power Transistor 2T8143U High-voltage bipolar high-current transistors 2T8143T1 High-power NPN special-purpose switching transistors 2T879A High-power NPN special-purpose switching transistors 2T879B High-voltage bipolar high-current transistors 2T8143S

Description

Powerful high-voltage silicon epitaxial-planar n-p-n switching transistors in ceramic-metal package, designed for operation in high-power key amplifier devices and other special-purpose equipment

Specifications

Decline time
0.4
Resorption time
2.1
Shutdown time
2.5
Boundary voltage
240 V
Base-emitter saturation voltage
2 V
Collector-emitter saturation voltage
0.8 V
Emitter reverse current
0.35 A
Collector-emitter reverse current
0.005 A
Collector reverse current
0.005 A
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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