Available for Import

High-voltage bipolar high-current transistors 2T8143F

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

High voltage bipolar high current transistors 2T8143U High-voltage bipolar high-current transistors 2T8143T1 High-power NPN special-purpose switching transistors 2T879A High-power NPN special-purpose switching transistors 2T879B High-voltage bipolar high-current transistors 2T8143S

High-voltage bipolar high-current transistors 2T8143T High voltage bipolar high current transistors 2T8143U1 High-voltage bipolar high-current transistors 2?8143?1

Description

Powerful high-voltage silicon epitaxial-planar n-p-n switching transistors in ceramic-metal package, designed for operation in high-power key amplifier devices and other special-purpose equipment

Specifications

Decline time 0.4

Resorption time 2.1

Shutdown time 2.5

Boundary voltage 240 V

Base-emitter saturation voltage 2 V

Collector-emitter saturation voltage 0.8 V

Emitter reverse current 0.35 A

Collector-emitter reverse current 0.005 A

Collector reverse current 0.005 A

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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